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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO = 60V(Min) *High DC Current Gain: hFE= 20-100@IC= 4A *Complement to Type MJE2955T APPLICATIONS *Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 70 60 5 10 6 75 150 -55~150 UNIT V V V A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.67 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJE3055T TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 8.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V VCE=70V;VEB(off)=-1.5V VCE=70V;VEB(off)=-1.5V;TC= 150 VCE= 30V; IB= 0 B 1.8 1.0 5.0 0.7 1.0 10 5.0 V ICEX Collector Cutoff Current mA ICEO Collector Cutoff Current mA ICBO Collector Cutoff Current VCB= 70V; IE= 0 VCB= 70V; IE= 0; TC= 150 VEB= 5V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 100 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f= 500kHz 2.0 MHz isc Websitewww.iscsemi.cn 2 |
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